Title :
A Commercial Field-Programmable Dense eFUSE Array Memory with 99.999% Sense Yield for 45nm SOI CMOS
Author :
Uhlmann, G. ; Aipperspach, T. ; Kirihata, Toshiaki ; Chandrasekharan, K. ; Yan Zun Li ; Paone, C. ; Reed, B. ; Robson, Norman ; Safran, John ; Schmitt, Dietmar ; Iyer, Srikrishna
Author_Institution :
IBM, Rochester, MN
Abstract :
This paper describes a second-generation one-time programmable read-only memory (OTPROM) that provides these features through a balanced bitline, resistor pull-up, differential sense amp with a programmable reference.
Keywords :
CMOS integrated circuits; PROM; silicon-on-insulator; SOI CMOS; balanced bitline; dense eFUSE array memory; differential sense amp; field-programmable memory; one-time programmable read-only memory; resistor pull-up; size 45 nm; Circuit testing; Decoding; Electrical resistance measurement; Fuses; MOS devices; Resistors; Silicides; Stacking; Very large scale integration; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 2008. ISSCC 2008. Digest of Technical Papers. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2010-0
Electronic_ISBN :
978-1-4244-2011-7
DOI :
10.1109/ISSCC.2008.4523229
