4H-SiC-DIMOSFET power device for home appliances

The 5×4.2 mm² chip of the SiC DIMOSFET was fabricated and tested. The drain-source avalanche breakdown voltage without any gate bias (Vgs=0V) is measured to be >1000V. The drain current (Id) >40A is observe under the conditions of Vds=1V and Vgs=+20V. Typical Ron and specific Ron are measured to be 22 mΩ and 3.5 mΩcm2 with V_th=2.3V. The SiC DIMOSFET is introduced into the PE circuits of the commercially available all-metal IH cooktop to test the loss-energy saving. On the PFC circuit, 2/3 reduction of the energy loss of the SW device is confirmed. On the inverter circuit, 21W reduction of the energy loss of the SW device is confirmed.