DocumentCode :
3465325
Title :
A MEMS IR thermal source for NDIR gas sensors
Author :
Ji, Xinming ; Wu, Feidie ; Wang, Jianye ; Jia, Zhou ; Bao, ZongMing ; Huang, Yiping
Author_Institution :
State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai
fYear :
2006
fDate :
23-26 Oct. 2006
Firstpage :
620
Lastpage :
622
Abstract :
A MEMS thermal emitter based on heating thin film resistors has been studied for the MEMS infrared gas sensor as an infrared (IR) source. The IR source, with an effective emitting area of 1.6 times 1.6 mm2, is fabricated using heated platinum thin film resistors deposited on a Si3N4/Si02 membrane. IR radiation power of the emitter is up to 60mW with the effective blackbody temperature ranged from 300 to 850K. Moreover, it has very good dynamic parameters a modulation frequency as high as 100Hz and a response time of 23ms. The properties of the source demonstrate the potential applications to meet the performance, size and low-cost requirements of the mass market
Keywords :
emissivity; gas sensors; infrared sources; microsensors; thin film resistors; 23 ms; 300 to 850 K; MEMS IR thermal source; MEMS thermal emitter; NDIR gas sensors; Si3N4-SiO2; electro modulation; infrared gas sensor; infrared source; thin film resistors; Gas detectors; Infrared heating; Infrared sensors; Micromechanical devices; Platinum; Resistors; Semiconductor thin films; Sputtering; Thermal resistance; Thin film sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
Type :
conf
DOI :
10.1109/ICSICT.2006.306394
Filename :
4098186
Link To Document :
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