DocumentCode :
3465335
Title :
Density comparison of isotopically enriched silicon single crystals by the pressure-of-flotation method
Author :
Waseda, A. ; Fujii, K.
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Nat. Metrol. Inst. of Japan, Tsukuba, Japan
fYear :
2010
fDate :
13-18 June 2010
Firstpage :
496
Lastpage :
497
Abstract :
An isotopically enriched silicon crystal is recently available for a new determination of the Avogadro constant. Density comparison measurement is presented for enriched 28Si crystals by the pressure-of-flotation (PF) method. Relative density difference for 28Si spheres Avo28-S5 and Avo28-S8 is evaluated to be (2.6±0.9)×10-8.
Keywords :
constants; density measurement; elemental semiconductors; silicon; Avogadro constant; Si; density comparison measurement; isotopically enriched silicon crystal; isotopically enriched silicon single crystals; pressure-of-flotation method; relative density difference; Containers; Crystals; Density measurement; Lattices; Metrology; Optical interferometry; Pressure measurement; Silicon; Solids; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Precision Electromagnetic Measurements (CPEM), 2010 Conference on
Conference_Location :
Daejeon
Print_ISBN :
978-1-4244-6795-2
Type :
conf
DOI :
10.1109/CPEM.2010.5543621
Filename :
5543621
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3465335
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