Title :
1200μm2 Physical Random-Number Generators Based on SiN MOSFET for Secure Smart-Card Application
Author :
Matsumoto, Mari ; Yasuda, Shinichi ; Ohba, Ryuji ; Ikegami, Kazutaka ; Tanamoto, Tetsufumi ; Fujita, Shinobu
Author_Institution :
Toshiba, Kawasaki
Abstract :
In this work, because of the high-amplitude random noise at high frequency from the SiN MOSFET, we need only a single amplifier and A/D converter, and the amplifier area is decreased.
Keywords :
AC-DC power convertors; MOSFET circuits; random noise; random number generation; silicon compounds; smart cards; A/D converter; SiN; SiN MOSFET; amplifier area; high-amplitude random noise; physical random-number generators; smart card; Application software; Circuit noise; Circuit testing; Cryptography; Integrated circuit noise; MOSFET circuits; Random number generation; Silicon compounds; Smart cards; Temperature dependence;
Conference_Titel :
Solid-State Circuits Conference, 2008. ISSCC 2008. Digest of Technical Papers. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2010-0
Electronic_ISBN :
978-1-4244-2011-7
DOI :
10.1109/ISSCC.2008.4523233
