• DocumentCode
    3465348
  • Title

    1200μm2 Physical Random-Number Generators Based on SiN MOSFET for Secure Smart-Card Application

  • Author

    Matsumoto, Mari ; Yasuda, Shinichi ; Ohba, Ryuji ; Ikegami, Kazutaka ; Tanamoto, Tetsufumi ; Fujita, Shinobu

  • Author_Institution
    Toshiba, Kawasaki
  • fYear
    2008
  • fDate
    3-7 Feb. 2008
  • Firstpage
    414
  • Lastpage
    624
  • Abstract
    In this work, because of the high-amplitude random noise at high frequency from the SiN MOSFET, we need only a single amplifier and A/D converter, and the amplifier area is decreased.
  • Keywords
    AC-DC power convertors; MOSFET circuits; random noise; random number generation; silicon compounds; smart cards; A/D converter; SiN; SiN MOSFET; amplifier area; high-amplitude random noise; physical random-number generators; smart card; Application software; Circuit noise; Circuit testing; Cryptography; Integrated circuit noise; MOSFET circuits; Random number generation; Silicon compounds; Smart cards; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2008. ISSCC 2008. Digest of Technical Papers. IEEE International
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    978-1-4244-2010-0
  • Electronic_ISBN
    978-1-4244-2011-7
  • Type

    conf

  • DOI
    10.1109/ISSCC.2008.4523233
  • Filename
    4523233
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3465348