DocumentCode
3465423
Title
Diffusion of chromium into GaAs as a way to detector material making
Author
Ardyshev, M.V. ; Prudajev, I.A. ; Khludkov, S.S.
Author_Institution
V.D. Kuznetsov Physicotech. Inst., Tomsk State Univ., Russia
fYear
2005
fDate
21-22 Oct. 2005
Firstpage
70
Lastpage
73
Abstract
The diffusion of chromium that is deep impurity in GaAs has been investigated as a way to high-ohmic detector material making. The coefficient of diffusion and the limiting dissolubility of chromium have been estimated.
Keywords
III-V semiconductors; chromium; diffusion; gallium arsenide; impurity states; semiconductor counters; semiconductor doping; GaAs:Cr; X-ray detection; chromium; deep impurity; diffusion coefficient; high-ohmic detector material; Chromium; Conductivity; Doping; Gallium arsenide; Impurities; Radiation detectors; Temperature dependence; Temperature distribution; X-ray detection; X-ray detectors; chromium; coefficient of diffusion; gallium arsenide;
fLanguage
English
Publisher
ieee
Conference_Titel
Control and Communications, 2005. SIBCON '05. IEEE International Siberian Conference on
Print_ISBN
0-7803-9219-1
Type
conf
DOI
10.1109/SIBCON.2005.1611195
Filename
1611195
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