Title :
A 4b/Cell 8Gb NROM Data-Storage Memory with Enhanced Write Performance
Author :
Sahar, Ran ; Lavan, Avi ; Geyari, Eran ; Berman, Amit ; Cohen, Itzic ; Tirosh, Ori ; Danon, Kobi ; Sofer, Yair ; Betser, Yoram ; Givant, Amichai ; Kushnarenko, Alexander ; Horesh, Yaal ; Eliyahu, Ron ; Maayan, Eduardo ; Eitan, Boaz ; Jen, Wang Pei ; Feng,
Author_Institution :
Saifun Semicond., Netanya
Abstract :
The increasing demand for cost reduction of data storage solutions calls for both cell-size shrink, as well as compressing more bits of data into the storage element. Yet the low cost solution is required to have fast enough write operation to fit density-hungry applications. An 8 Gb data flash storage device based on 4b/cell NROM technology is presented in this paper. A major improvement in write time is accomplished through improvement of programming techniques, erase scheme and sensing methods.
Keywords :
cost reduction; flash memories; read-only storage; NROM data-storage memory; cost reduction; enhanced write performance; flash storage device; programming technique; storage capacity 8 Gbit; Capacitance; Charge pumps; Degradation; Driver circuits; Leakage current; Nonvolatile memory; Regulators; Resistors; Threshold voltage; Voltage control;
Conference_Titel :
Solid-State Circuits Conference, 2008. ISSCC 2008. Digest of Technical Papers. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2010-0
Electronic_ISBN :
978-1-4244-2011-7
DOI :
10.1109/ISSCC.2008.4523237
