Title :
Analysis of free-carrier charges distribution in the n-GaAs monocrystals used at formation of the high-resistance material for the ionizing radiation sensors
Author :
Budnitsky, D.L. ; Koretskaya, O.B. ; Novikov, V.A. ; Tolbanov, O.P.
Author_Institution :
Siberian Phys.-Tech. Inst., Tomsk, Russia
Abstract :
In the paper, analysis of charge distribution in the gallium arsenide monocrystals are presented. The absorption spectrums are investigated. It is described that non-destroying testing of monocrystals before diffusion is possible.
Keywords :
III-V semiconductors; carrier density; chromium; diffusion; gallium arsenide; semiconductor counters; Cr diffusion; GaAs:Cr; absorption spectrum; free-carrier charge distribution; high-resistance material; ionizing radiation sensor; n-GaAs monocrystals; nondestroying testing; Charge carriers; Chromium; Conducting materials; Conductivity; Detectors; Electromagnetic wave absorption; Electrons; Gallium arsenide; Ionizing radiation sensors; Testing; absorbing spectrum; free-carrier charge; gallium arsenide;
Conference_Titel :
Control and Communications, 2005. SIBCON '05. IEEE International Siberian Conference on
Print_ISBN :
0-7803-9219-1
DOI :
10.1109/SIBCON.2005.1611197
