Title :
The influence of thermal annealing on sensitivity of silicon MOS-diodes to reducing gases
Author :
Baljuba, V.I. ; Grisyk, V.Y. ; Davidova, T.A. ; Kalygina, V.M. ; Nazarov, S.S. ; Panin, A.V. ; Khludkova, L.S.
Author_Institution :
Tomsk State Univ., Russia
Abstract :
The influence of the thermal annealing in the range of Tan=(200-610)°C on sensitivity and transient response characteristics of Pd-SiO2-Si MOS-diodes upon exposure to hydrogen and ammonia was studied. It is shown that after annealing at 200°C during 10 minutes the capacitance response to H2 is higher than NH3 response. After annealing at Tan ≥ 300°C the MOS diode sensitivity to H2 practically disappears while the NH3 response is enough high still though it decreases gradually as Tan increases. The Pd surface relief was investigated with AFM after annealing of diodes at (200-610)°C.
Keywords :
MIS devices; annealing; atomic force microscopy; elemental semiconductors; palladium; semiconductor device measurement; semiconductor diodes; silicon; silicon compounds; 10 min; 200 to 610 C; AFM; H2; NH3; Pd-SiO2-Si; ammonia; capacitance response; hydrogen; sensitivity; silicon MOS-diodes; surface relief; thermal annealing; transient response characteristics; Annealing; Capacitance; Electrodes; Gases; Hydrogen; Materials science and technology; Physics; Semiconductor diodes; Silicon; Voltage; Ammonia; Annealing temperature; Hydrogen; MOS-diodes;
Conference_Titel :
Control and Communications, 2005. SIBCON '05. IEEE International Siberian Conference on
Print_ISBN :
0-7803-9219-1
DOI :
10.1109/SIBCON.2005.1611199
