The influence of thermal annealing on sensitivity of silicon MOS-diodes to reducing gases

Author

Baljuba, V.I. ; Grisyk, V.Y. ; Davidova, T.A. ; Kalygina, V.M. ; Nazarov, S.S. ; Panin, A.V. ; Khludkova, L.S.

Author_Institution

Tomsk State Univ., Russia

fYear

2005

fDate

21-22 Oct. 2005

Firstpage

90

Lastpage

95

Abstract

The influence of the thermal annealing in the range of T_an=(200-610)°C on sensitivity and transient response characteristics of Pd-SiO₂-Si MOS-diodes upon exposure to hydrogen and ammonia was studied. It is shown that after annealing at 200°C during 10 minutes the capacitance response to H₂ is higher than NH₃ response. After annealing at T_an ≥ 300°C the MOS diode sensitivity to H₂ practically disappears while the NH₃ response is enough high still though it decreases gradually as T_an increases. The Pd surface relief was investigated with AFM after annealing of diodes at (200-610)°C.

Keywords

MIS devices; annealing; atomic force microscopy; elemental semiconductors; palladium; semiconductor device measurement; semiconductor diodes; silicon; silicon compounds; 10 min; 200 to 610 C; AFM; H₂; NH₃; Pd-SiO₂-Si; ammonia; capacitance response; hydrogen; sensitivity; silicon MOS-diodes; surface relief; thermal annealing; transient response characteristics; Annealing; Capacitance; Electrodes; Gases; Hydrogen; Materials science and technology; Physics; Semiconductor diodes; Silicon; Voltage; Ammonia; Annealing temperature; Hydrogen; MOS-diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Control and Communications, 2005. SIBCON '05. IEEE International Siberian Conference on

Print_ISBN

0-7803-9219-1

Type

conf

DOI

10.1109/SIBCON.2005.1611199

Filename

1611199