Title :
Gamma quantum and alpha particle counters based on GaAs detectors
Author :
Rozhnev, M.A. ; Ryabkov, S.A. ; Mokeev, D.Yu. ; Tyazhev, A.V. ; Zarubin, A.N.
Author_Institution :
Siberian Phys.-Tech. Inst., Tomsk, Russia
Abstract :
In the paper, results of development and preliminary tests for counters of the gamma quantum and α-particles using the detectors on GaAs, compensated by Cr are presented. It is shown that GaAs detectors allows to create high-speed and selective ionizing radiation counters. It is founded that radiating stability of GaAs detectors exceeds 5 MRad and 50 MRad at irradiation by protons (Ep = 1GeV) and gamma quantums (Eγ= 1MeV), accordingly.
Keywords :
alpha-particle detection; alpha-particle effects; gamma-ray detection; gamma-ray effects; ion beam effects; proton detection; semiconductor counters; Cr compensated GaAs detectors; alpha particle counter; gamma quantum counter; ionizing radiation counter; proton irradiation; Alpha particles; Chromium; Counting circuits; Gallium arsenide; Gamma ray detection; Gamma ray detectors; Ionizing radiation; Radiation detectors; Stability; Testing; GaAs; alpha particle; counter; detector; gamma quantum;
Conference_Titel :
Control and Communications, 2005. SIBCON '05. IEEE International Siberian Conference on
Print_ISBN :
0-7803-9219-1
DOI :
10.1109/SIBCON.2005.1611204