Title :
SiN-masked GaN-on-patterned-silicon (GPS) technique for fabrication of suspended GaN microstructures
Author :
Yang, Zhenchuan ; Zhang, Baoshun ; Lau, Kei May ; Chen, Kevin J.
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon
Abstract :
The authors developed a SiN-masked GaN-on-patterned-Silicon (GPS) technique for fabricating suspended GaN microstructures without direct GaN etching. The masked GPS technique combines masked selective area growth (SAG) of gallium nitride (GaN) on patterned silicon substrate and subsequent sacrificial undercutting of GaN microstructures by isotropic wet etchant. The experimental results show that the suspended GaN microstructures fabricated by SiN-masked GPS technique can feature smooth edges
Keywords :
III-V semiconductors; crystal microstructure; etching; gallium compounds; silicon compounds; substrates; GaN; GaN-on-patterned-silicon technique; SiN; isotropic wet etchant; masked GPS technique; masked selective area growth; patterned silicon substrate; suspended microstructures; Dielectric substrates; Fabrication; Gallium nitride; Global Positioning System; HEMTs; Hafnium; III-V semiconductor materials; Microstructure; Silicon compounds; Wet etching;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306432
