DocumentCode
3465792
Title
Advanced tunnel dielectrics for flash memory technology
Author
Ma, T.P.
Author_Institution
Dept. of Electr. Eng., Yale Univ., New Haven, CT
fYear
2006
fDate
23-26 Oct. 2006
Firstpage
693
Lastpage
696
Abstract
This paper introduces several advanced tunnel dielectrics, synthesized by the MAD technique, to overcome the scaling limitations encountered by the current flash memory technology. Because of space limitations, only trap-less silicon nitride will be covered in this write-up
Keywords
dielectric materials; flash memories; MAD technique; advanced tunnel dielectrics; flash memory; CMOS technology; Charge carrier processes; Dielectrics; Electron traps; Flash memory; Flash memory cells; Silicon; Space technology; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0160-7
Electronic_ISBN
1-4244-0161-5
Type
conf
DOI
10.1109/ICSICT.2006.306439
Filename
4098209
Link To Document