Title :
Advanced tunnel dielectrics for flash memory technology
Author_Institution :
Dept. of Electr. Eng., Yale Univ., New Haven, CT
Abstract :
This paper introduces several advanced tunnel dielectrics, synthesized by the MAD technique, to overcome the scaling limitations encountered by the current flash memory technology. Because of space limitations, only trap-less silicon nitride will be covered in this write-up
Keywords :
dielectric materials; flash memories; MAD technique; advanced tunnel dielectrics; flash memory; CMOS technology; Charge carrier processes; Dielectrics; Electron traps; Flash memory; Flash memory cells; Silicon; Space technology; Tunneling; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306439
