• DocumentCode
    3465854
  • Title

    Technology scaling impact on NOR and NAND flash memories and their applications

  • Author

    Pon, Harry

  • Author_Institution
    Flash Memory Group, Intel Corp., Folsom, CA
  • fYear
    2006
  • fDate
    Oct. 2006
  • Firstpage
    697
  • Lastpage
    700
  • Abstract
    NOR and NAND flash memories have scaled over 9 generations and 20 years since their 1986 product introductions. This scaling of both memory types in conjunction with MLC technology have enabled the cellular phone market and digital still camera market with high density code and removable data storage. This paper will discuss how flash technology scaling continues to enable new solutions for both the mobile communication and PC computing platforms. A new DDR NOR flash interface will enable high performance (133MHz and higher) code execution in mobile applications such as 3G/UMTS mobile phones. Non-volatile memory (NVM) disk caches are emerging as key and viable subsystem for the PC computing and other applications. The addition of NAND flash into the PC memory hierarchy delivers better performance, improved power savings and a richer user experience. Despite the challenges imposed by memory technology scaling, flash memory solutions will evolve to an ever changing variety of application needs with lower power, ever diversified and more efficient solutions
  • Keywords
    3G mobile communication; NAND circuits; NOR circuits; cameras; flash memories; mobile handsets; 3G mobile communication; DDR NOR flash memories; MLC technology; NAND flash memories; PC memory; UMTS; cellular phone; digital still camera; nonvolatile memory; removable data storage; technology scaling; 3G mobile communication; Capacitance; Cellular phones; Cities and towns; Clocks; Digital cameras; Flash memory; Logic programming; Nonvolatile memory; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    1-4244-0160-7
  • Electronic_ISBN
    1-4244-0161-5
  • Type

    conf

  • DOI
    10.1109/ICSICT.2006.306440
  • Filename
    4098210