Title :
Parallel modeling of the IGBT electrothermal behavior
Author :
Benhissen, Nacer-Eddine ; Skorek, Adam ; Lakhsasi, Ahmed
Author_Institution :
Dept. of Electr. Eng., Quebec Univ., Trois-Rivieres, Que., Canada
Abstract :
This paper presents a sequential and parallel models of an IGBT (insulated gate bipolar transistor) electrothermal behavior. The thermal model is described by a 3-D finite difference method. It allows to take into consideration the heat distribution dissipated in the device component. The parallel processing was carried out on four SPARC 20 workstations, with 64 Mo RAM memory on each node, and the sequential processing only on one node. The authors have chosen a network totally connected with a LAM configuration (a tool allowing to send and receive messages from one station to the other). To configure the LAM, they used the standard MPI program, which is applied in the C language, which allows great flexibility in the development of parallel code
Keywords :
electronic engineering computing; finite difference methods; insulated gate bipolar transistors; parallel processing; semiconductor device models; thermal analysis; 3-D finite difference method; C language; IGBT electrothermal behavior; LAM configuration; SPARC 20 workstations; computer simulation; device component; heat distribution dissipation; parallel code development; parallel modelling; parallel processing; sequential processing; standard MPI program; Computer industry; Electrothermal effects; Equations; Finite difference methods; Insulated gate bipolar transistors; Laboratories; Parallel processing; Silicon; Temperature distribution; Thermal conductivity;
Conference_Titel :
Industry Applications Conference, 1999. Thirty-Fourth IAS Annual Meeting. Conference Record of the 1999 IEEE
Conference_Location :
Phoenix, AZ
Print_ISBN :
0-7803-5589-X
DOI :
10.1109/IAS.1999.801684
