Parallel modeling of the IGBT electrothermal behavior

Author

Benhissen, Nacer-Eddine ; Skorek, Adam ; Lakhsasi, Ahmed

Author_Institution

Dept. of Electr. Eng., Quebec Univ., Trois-Rivieres, Que., Canada

Volume

2

fYear

1999

fDate

1999

Firstpage

1403

Abstract

This paper presents a sequential and parallel models of an IGBT (insulated gate bipolar transistor) electrothermal behavior. The thermal model is described by a 3-D finite difference method. It allows to take into consideration the heat distribution dissipated in the device component. The parallel processing was carried out on four SPARC 20 workstations, with 64 Mo RAM memory on each node, and the sequential processing only on one node. The authors have chosen a network totally connected with a LAM configuration (a tool allowing to send and receive messages from one station to the other). To configure the LAM, they used the standard MPI program, which is applied in the C language, which allows great flexibility in the development of parallel code

Keywords

electronic engineering computing; finite difference methods; insulated gate bipolar transistors; parallel processing; semiconductor device models; thermal analysis; 3-D finite difference method; C language; IGBT electrothermal behavior; LAM configuration; SPARC 20 workstations; computer simulation; device component; heat distribution dissipation; parallel code development; parallel modelling; parallel processing; sequential processing; standard MPI program; Computer industry; Electrothermal effects; Equations; Finite difference methods; Insulated gate bipolar transistors; Laboratories; Parallel processing; Silicon; Temperature distribution; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 1999. Thirty-Fourth IAS Annual Meeting. Conference Record of the 1999 IEEE

Conference_Location

Phoenix, AZ

ISSN

0197-2618

Print_ISBN

0-7803-5589-X

Type

conf

DOI

10.1109/IAS.1999.801684

Filename

801684