Title :
ITO-channel ferroelectric-gate thin film transistor with large on-current
Author :
Tokumitsu, Eisuke
Author_Institution :
Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama
Abstract :
Excellent transistor operation with large on-current and nonvolatile memory function is demonstrated for ferroelectric-gate thin film transistors (TFTs) using indium-tin-oxide (ITO) as a channel material. (Bi,La)4Ti3O12 (BLT) is used as a gate insulator to obtain TFTs with nonvolatile memory function and (Ba,Sr)TiO3 (BST) is used to fabricate TFTs without the memory function. Large on-current is due to the large charge density induced by the ferroelectric gate insulator in spite of the low channel mobility. In addition, relatively low off current can be obtained because the thin ITO channel can be depleted completely by the ferroelectric polarization
Keywords :
barium compounds; bismuth compounds; ferroelectric thin films; lanthanum compounds; random-access storage; strontium compounds; thin film transistors; titanium compounds; (BaSr)TiO3; (BiLa)4Ti3O12; ITO-channel ferroelectric-gate thin film transistor; channel material; ferroelectric gate insulator; ferroelectric polarization; ferroelectric-gate thin film transistors; large on-current; nonvolatile memory function; Electric breakdown; Ferroelectric materials; High K dielectric materials; High-K gate dielectrics; Indium tin oxide; Insulation; Nonvolatile memory; Polarization; Thin film transistors; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306467
