ITO-channel ferroelectric-gate thin film transistor with large on-current

Author

Tokumitsu, Eisuke

Author_Institution

Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

717

Lastpage

720

Abstract

Excellent transistor operation with large on-current and nonvolatile memory function is demonstrated for ferroelectric-gate thin film transistors (TFTs) using indium-tin-oxide (ITO) as a channel material. (Bi,La)₄Ti₃O₁₂ (BLT) is used as a gate insulator to obtain TFTs with nonvolatile memory function and (Ba,Sr)TiO₃ (BST) is used to fabricate TFTs without the memory function. Large on-current is due to the large charge density induced by the ferroelectric gate insulator in spite of the low channel mobility. In addition, relatively low off current can be obtained because the thin ITO channel can be depleted completely by the ferroelectric polarization

Keywords

barium compounds; bismuth compounds; ferroelectric thin films; lanthanum compounds; random-access storage; strontium compounds; thin film transistors; titanium compounds; (BaSr)TiO₃; (BiLa)₄Ti₃O₁₂; ITO-channel ferroelectric-gate thin film transistor; channel material; ferroelectric gate insulator; ferroelectric polarization; ferroelectric-gate thin film transistors; large on-current; nonvolatile memory function; Electric breakdown; Ferroelectric materials; High K dielectric materials; High-K gate dielectrics; Indium tin oxide; Insulation; Nonvolatile memory; Polarization; Thin film transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306467

Filename

4098215