DocumentCode
3465980
Title
Some solutions for writing current reduction and high density application of phase change memory
Author
Lin, Yinyin ; Feng, Jie ; Cai, Yaifei ; Lv, Hangbing ; Liao, Feifei ; Liu, Xin ; Tang, Tingao ; Qiao, Baowei ; Lai, Yunfeng ; Zhang, Yi ; Cai, Bingchu ; Chen, Bomy
Author_Institution
Dept. of Microelectron., Fudan Univ., Shanghai
fYear
2006
fDate
Oct. 2006
Firstpage
721
Lastpage
724
Abstract
High writing current is the bottle-neck of PCM application and efforts focus on merely materials doping to improve crystal resistivity, novel structure to decrease active area etc. Here some solutions of our group are shown, including Si doped GST, novel 2D and 3D memory cell structure and multistate storage
Keywords
integrated memory circuits; phase change materials; 2D memory cell structure; 3D memory cell structure; Si; current reduction; high density application; high writing current; multistate storage; phase change memory; silicon doped GST; CMOS process; CMOS technology; Conductivity; Crystallization; Doping; Lithography; Microelectronics; Phase change materials; Phase change memory; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0160-7
Electronic_ISBN
1-4244-0161-5
Type
conf
DOI
10.1109/ICSICT.2006.306468
Filename
4098216
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