Extremely Low Voltage and High Speed Deep Trapping MONOS Memory with Good Retention

Author

Chin, Albert ; Lai, C.H. ; Yang, H.J. ; Chen, W.J. ; Wu, Y.H. ; Hwang, H.L.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu

fYear

2006

fDate

Oct. 2006

Firstpage

744

Lastpage

747

Abstract

We propose and demonstrate a novel low voltage and high speed MONOS non-volatile memory (NVM) using deep trapping layer, metal-gate and high-k dielectric technology. Low 13 V program/erase (P/E), fast 100 mus speed, large 1.9 V extrapolated 10-year memory window at 85degC, and small 21% degradation after 85degC 10k cycling are simultaneously measured in SiO₂/AlN/AlHfO/Ir-Oxide MONOS memory. Even lower 8 V (or plusmn 4V) P/E, fast 100 mus speed, still large 1.45 V extrapolated 10-year memory window at 85degC, and small 16% degradation after 85degC 10k cycling are measured in SiO₂/HfON/HfAlO/TaN MONOS device. This is the reported lowest P/E voltage and fastest speed NVM to date and useful for embedded SoC under 5 V

Keywords

dielectric materials; low-power electronics; random-access storage; 1.9 V; 100 mus; 13 V; 85 C; MONOS device; MONOS nonvolatile memory; SiO₂-HfON-HfAlO-TaN; deep trapping layer; embedded SoC; high speed deep trapping MONOS memory; high-k dielectric technology; Degradation; Dielectric measurements; Low voltage; MONOS devices; Nonvolatile memory; Pulse measurements; SONOS devices; Sputtering; Temperature; Velocity measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306474

Filename

4098222