DocumentCode
3466096
Title
Mathematical approximation of the hyperbolic tangent
Author
Dhieb, Mohamed ; Lahiani, Mongi ; Ghariani, Hamadi
Author_Institution
Electr. Eng. Dept., Nat. Eng. Sch. of Sfax, Sfax
fYear
2009
fDate
23-26 March 2009
Firstpage
1
Lastpage
6
Abstract
This paper presents an assimilation of the transfer function of a differential pair of MOS transistors to a hyperbolic tangent function. Also it prove, that the characteristic of transfer function of a MOS differential pair is symmetrical and that is close to the one of the bipolar transistors differential pair (It represent the transfer function of this differential pair; it describe the output signal in the form of a hyperbolic tangent of the input signal) with minor differences in our application. For this comparison, we use a MOS model transistor (0.35 mum) resulting from the library of the AMS foundry and on other hand we use a perfect nonlinear model of the bipolar transistor resulting from the Agilent-ADS library.
Keywords
MOSFET; approximation theory; bipolar transistors; Agilent-ADS library; MOS transistors; bipolar transistors differential pair; hyperbolic tangent function; mathematical approximation; Bipolar transistors; Educational institutions; Foundries; Laboratories; Libraries; MOSFETs; Pulse generation; Transfer functions; Ultra wideband communication; Ultra wideband technology; MOS transistors differential pair; Transfer function; hyperbolic tangent; monocycle pulses; wavelet generator;
fLanguage
English
Publisher
ieee
Conference_Titel
Systems, Signals and Devices, 2009. SSD '09. 6th International Multi-Conference on
Conference_Location
Djerba
Print_ISBN
978-1-4244-4345-1
Electronic_ISBN
978-1-4244-4346-8
Type
conf
DOI
10.1109/SSD.2009.4956699
Filename
4956699
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