Title :
A Novel Multi-Channel Phase-Change Memory Cell for Multi-State Storage with High Controllability
Author :
Yin, You ; Ohta, Kazuhiro ; Sone, Hayato ; Hosaka, Sumio
Author_Institution :
Dept. of Nano-Material Syst., Gunma Univ.
Abstract :
Lateral single-channel (SC) and multi-channel (MC) phase-change memory (PCM) cell structures are numerically analyzed for multi-state storage based on their temperature distributions and their programming characteristics. As studied by finite element modeling (FEM), shorter pulses lead to more gradual transition from the set to the reset state of these cells. Especially, for the MC-PCM cell with channels having different lengths, channels are sequentially melted with increasing pulse amplitude. Corresponding step-like programming characteristics of the cell indicate high performance for its application of multi-state storage
Keywords :
finite element analysis; phase changing circuits; random-access storage; finite element modeling; multistate storage; phase-change memory cell; pulse amplitude; temperature distributions; Conductivity; Controllability; Crystallization; Design optimization; Finite element methods; Heat transfer; Lead; Phase change materials; Phase change memory; Temperature distribution;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306484
