Device Tunnel Parameters for CoFe/Al-O/CoFe 1T1MTJ MRAM

Author

Li, Simon C. ; Lee, J.M. ; Su, J.P. ; Wu, Te-Ho

Author_Institution

Graduate Inst. of Commun. Eng., National Univ. of Tainan

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

803

Lastpage

805

Abstract

Dielectric tunnel device parameters of CoFe/Al-O/CoFe MTJ of MRAM cell are measured and analyzed. General mathematical derivations for dielectric tunnel parameters in bright and dark region of MTJ cell are derived. The symmetry variation of dielectric tunnel charge in dark region of MTJ demonstrates a good balanced charge-conserved ferromagnetic plate capacitor. Parameters extraction and equivalent circuit model of dielectric tunnel capacitance C and resistance R from current-voltage curves for data 0 and 1 during 1T1MTJ read mode are proposed and demonstrated

Keywords

aluminium compounds; cobalt compounds; equivalent circuits; magnetic storage; magnetic tunnelling; random-access storage; CoFe-Al-O; dark region; dielectric tunnel charge; equivalent circuit; ferromagnetic plate capacitor; magnetic RAM; magnetic tunnel junctions; Atomic force microscopy; Atomic measurements; Capacitance; Capacitors; Current measurement; Dielectric measurements; Electrical resistance measurement; Force measurement; Magnetic tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306512

Filename

4098239