Title :
Reversible resistive switching of Gd-doped TiO2 thin films for nonvolatile memory applications
Author :
Liu, L.F. ; Tang, H. ; Wang, Y. ; Wang, W. ; Tian, D.Y. ; Liu, X.Y. ; Zhang, X. ; Han, R.Q. ; Kang, J.F.
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing
Abstract :
Gd doped TiO2 poly crystalline thin film was prepared on Pt/Ti/SiO2/Si substrates by sol-gel method. Nonvolatile and reversible bistable resistance states were demonstrated for the first time. Excellent reversible resistive switching characteristics with 0.6 plusmn 0.1V reset bias and 2.0 plusmn 0.1V set bias and a resistance difference by over three orders of magnitude were achieved in 3%Gd doped TiO2 poly crystalline thin films
Keywords :
gadolinium; random-access storage; semiconductor thin films; sol-gel processing; titanium compounds; TiO2-Gd; nonvolatile memory applications; poly crystalline thin film; reversible bistable resistance states; reversible resistive switching; sol-gel method; Atmospheric measurements; Electrodes; Nonvolatile memory; Scanning electron microscopy; Semiconductor films; Semiconductor thin films; Substrates; Switches; Transistors; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306522
