• DocumentCode
    3466574
  • Title

    Circuits and Implementation of a Low-Power Embedded EEPROM Memory

  • Author

    Dong-Sheng, Liu ; Xue-cheng, Zou ; Fan, Zhang ; Min, Deng

  • Author_Institution
    Dept. of Electron. Sci. & Technol., Huazhong Univ. of Sci., Wuhan
  • fYear
    2006
  • fDate
    23-26 Oct. 2006
  • Firstpage
    836
  • Lastpage
    838
  • Abstract
    A 2-Kbit low-power embedded EEPROM memory, which is based on SMIC 0.35 mum three-metal two-poly mixed signal CMOS technology with embedded EEPROM technology, has been developed. Key design techniques of power dissipation optimization for EEPROM memory are described. Optimizations of the current consumption for the charge pump circuit are treated in this paper. To optimize the read access power consumption, a new SA (sense amplifier) using voltage sensing is proposed
  • Keywords
    CMOS integrated circuits; EPROM; embedded systems; low-power electronics; 0.35 micron; charge pump circuit; current consumption; low-power embedded EEPROM memory; power dissipation optimization; sense amplifier; three-metal two-poly mixed signal CMOS technology; CMOS technology; Charge pumps; Circuits; Design optimization; EPROM; Power amplifiers; Power dissipation; Read-write memory; Signal processing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    1-4244-0160-7
  • Electronic_ISBN
    1-4244-0161-5
  • Type

    conf

  • DOI
    10.1109/ICSICT.2006.306523
  • Filename
    4098250