Title :
Electron Transport in InN
Author :
Schwierz, Frank ; Polyakov, Vladimir M.
Author_Institution :
Fachgebiet Festkorperelektronik, Technische Univ. Ilmenau
Abstract :
The paper provides an overview on the current understanding of electron transport in wurtzite indium nitride (InN). First, recent findings concerning the bandgap of InN are reviewed and their consequences on electron transport are discussed. Then, applying the ensemble Monte Carlo method and new band structure data from the literature, the electron transport in InN is investigated in detail. We calculate a peak steady-state drift velocity of more than 5times107 cm/s at an electric field of 32 kV/cm, a pronounced transient velocity overshoot, and a remarkably high low-field mobility of 14000 cm2/Vs for undoped InN. The features of the electron transport in InN are compared to those in other semiconductors and the prospects of InN-based highspeed transistors are addressed
Keywords :
III-V semiconductors; Monte Carlo methods; electron mobility; electron transport theory; indium compounds; wide band gap semiconductors; InN; Monte Carlo method; band structure data; electron transport; peak steady-state drift velocity; wurtzite indium nitride; Acoustic scattering; Effective mass; Electron mobility; Gallium nitride; Indium; Lattices; Optical scattering; Phonons; Photonic band gap; Steady-state;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306526
