Liquid Phase Oxidation on GaAs-based Transistor Applications

Author

Wang, Yeong-Her ; Lee, Kuan-Wei

Author_Institution

Dept. of Electr. Eng., National Cheng-Kung Univ., Tainan

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

849

Lastpage

852

Abstract

The GaAs-based MOS-HEMT with oxide as the gate dielectric and HBTs with surface passivation prepared by liquid phase oxidation has been successfully demonstrated. As compared to its counterpart HEMTs, the larger gate swing voltages, lower gate leakage currents, and higher breakdown voltages make the proposed technique suitable for power device applications. Moreover, the HBTs with oxide passivation possess the characteristics of lower surface recombination currents, higher breakdown voltage, and improved higher dc current gain

Keywords

III-V semiconductors; MOSFET; gallium arsenide; heterojunction bipolar transistors; high electron mobility transistors; oxidation; passivation; semiconductor device breakdown; GaAs; GaAs-based MOS-HEMT; GaAs-based transistor; HBT; breakdown voltages; gate dielectric; gate leakage currents; gate swing voltages; heterojunction bipolar transistors; high electron mobility transistors; liquid phase oxidation; oxide passivation; surface passivation; surface recombination currents; Gallium arsenide; HEMTs; Impact ionization; Indium compounds; Indium gallium arsenide; Leakage current; MODFETs; Oxidation; Passivation; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306527

Filename

4098254