• DocumentCode
    3466735
  • Title

    Effect of Traps and Self Heating on the Microwave Performance of SiC MESFETs

  • Author

    Asmi, Shabna ; Abdel-Motaleb, Ibrahim M.

  • Author_Institution
    Dept. of Electr. Eng., Northern Illinois Univ., DeKalb, IL
  • fYear
    2006
  • fDate
    23-26 Oct. 2006
  • Firstpage
    863
  • Lastpage
    865
  • Abstract
    The impact of traps and self-heating on the performance of SiC MESFETs, operating in the microwave range has been investigated. A non-quasi-static model that includes these effects has been developed. The model´s simulation results were found to be in full agreement with the measured data. The results show that an increase of the trap concentration from 1014 cm-3 to 1016 cm -3 reduces the cutoff frequency by about 40%, and an increase in the temperature by about only 5 OK above the room temperature reduces the cutoff frequencies by about 45%
  • Keywords
    Schottky gate field effect transistors; electron traps; semiconductor device models; silicon compounds; wide band gap semiconductors; MESFET; SiC; microwave performance; non-quasi-static model; self heating; trap concentration; Cutoff frequency; Electromagnetic heating; FETs; MESFETs; Semiconductor materials; Silicon carbide; Temperature; Thermal conductivity; Thermal resistance; Wideband;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    1-4244-0160-7
  • Electronic_ISBN
    1-4244-0161-5
  • Type

    conf

  • DOI
    10.1109/ICSICT.2006.306553
  • Filename
    4098258
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3466735