Title :
Effect of Traps and Self Heating on the Microwave Performance of SiC MESFETs
Author :
Asmi, Shabna ; Abdel-Motaleb, Ibrahim M.
Author_Institution :
Dept. of Electr. Eng., Northern Illinois Univ., DeKalb, IL
Abstract :
The impact of traps and self-heating on the performance of SiC MESFETs, operating in the microwave range has been investigated. A non-quasi-static model that includes these effects has been developed. The model´s simulation results were found to be in full agreement with the measured data. The results show that an increase of the trap concentration from 1014 cm-3 to 1016 cm -3 reduces the cutoff frequency by about 40%, and an increase in the temperature by about only 5 OK above the room temperature reduces the cutoff frequencies by about 45%
Keywords :
Schottky gate field effect transistors; electron traps; semiconductor device models; silicon compounds; wide band gap semiconductors; MESFET; SiC; microwave performance; non-quasi-static model; self heating; trap concentration; Cutoff frequency; Electromagnetic heating; FETs; MESFETs; Semiconductor materials; Silicon carbide; Temperature; Thermal conductivity; Thermal resistance; Wideband;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306553
