• DocumentCode
    3466820
  • Title

    60 and 77GHz Power Amplifiers in Standard 90nm CMOS

  • Author

    Suzuki, Toshihide ; Kawano, Yoichi ; Sato, Masaru ; Hirose, Tatsuya ; Joshin, Kazukiyo

  • Author_Institution
    Fujitsu Labs., Atsugi
  • fYear
    2008
  • fDate
    3-7 Feb. 2008
  • Firstpage
    562
  • Lastpage
    636
  • Abstract
    This paper describes the implementation of 60 and 77GHz PAs in standard 90nm CMOS technology. An accurate transistor model is developed that enables designing circuits operating at frequencies up to 80GHz. The circuits are designed with a unique matching topology for reducing the RF signal loss in matching networks.
  • Keywords
    CMOS integrated circuits; integrated circuit design; power amplifiers; CMOS technology; frequency 60 GHz; frequency 77 GHz; matching networks; matching topology; power amplifiers; size 90 nm; CMOS technology; Distributed parameter circuits; Electrical resistance measurement; Frequency; MIM capacitors; Power amplifiers; Power transmission lines; Semiconductor device modeling; Silicon; Transceivers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2008. ISSCC 2008. Digest of Technical Papers. IEEE International
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    978-1-4244-2010-0
  • Electronic_ISBN
    978-1-4244-2011-7
  • Type

    conf

  • DOI
    10.1109/ISSCC.2008.4523307
  • Filename
    4523307
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3466820