Title :
60 and 77GHz Power Amplifiers in Standard 90nm CMOS
Author :
Suzuki, Toshihide ; Kawano, Yoichi ; Sato, Masaru ; Hirose, Tatsuya ; Joshin, Kazukiyo
Author_Institution :
Fujitsu Labs., Atsugi
Abstract :
This paper describes the implementation of 60 and 77GHz PAs in standard 90nm CMOS technology. An accurate transistor model is developed that enables designing circuits operating at frequencies up to 80GHz. The circuits are designed with a unique matching topology for reducing the RF signal loss in matching networks.
Keywords :
CMOS integrated circuits; integrated circuit design; power amplifiers; CMOS technology; frequency 60 GHz; frequency 77 GHz; matching networks; matching topology; power amplifiers; size 90 nm; CMOS technology; Distributed parameter circuits; Electrical resistance measurement; Frequency; MIM capacitors; Power amplifiers; Power transmission lines; Semiconductor device modeling; Silicon; Transceivers;
Conference_Titel :
Solid-State Circuits Conference, 2008. ISSCC 2008. Digest of Technical Papers. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2010-0
Electronic_ISBN :
978-1-4244-2011-7
DOI :
10.1109/ISSCC.2008.4523307
