A Ku/K-band PHEMT Diode Single-balanced Mixer

Author

Lin, Che-Hung ; Liu, Hong-Zhi ; Chu, Chen-Kuo ; Huang, Hou-Kuei ; Liu, Chi-Chuan ; Chang, Ching-Hsueh ; Wu, Chang-Luen ; Chang, Chian-Sern ; Wang, Yeong-Her

Author_Institution

Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan

fYear

2006

fDate

Oct. 2006

Firstpage

884

Lastpage

886

Abstract

This paper describes the design and measured performance of a single-balanced mixer using a planar Marchand balun for operation in the microwave and millimeter-wave bands. The MMIC was fabricated on AlGaAs/InGaAs/GaAs pseudomorphic high-electron-mobility transistor (PHEMT) processes with a chip size of 2.11 times 1.54 mm². The best up-conversion loss is 8 dB with an LO-to-RF isolation better than 30 dB

Keywords

III-V semiconductors; MMIC mixers; aluminium compounds; baluns; gallium arsenide; high electron mobility transistors; indium compounds; millimetre wave mixers; AlGaAs-InGaAs-GaAs; Ku/K-band PHEMT diode single-balanced mixer; MMIC; planar Marchand balun; pseudomorphic high-electron-mobility transistor; Diodes; Impedance matching; Indium gallium arsenide; K-band; MMICs; Microwave measurements; Millimeter wave measurements; Millimeter wave transistors; PHEMTs; Semiconductor device measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306560

Filename

4098265