Title :
Current Discontinuity Character of MSM UV Detector Grown with AlGaN/GaN Multi-quantum Well
Author :
Zhou, J. ; Hao, Y.L. ; Yang, Z.J. ; Zhang, G.Y.
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing
Abstract :
The oscillation phenomena of current-voltage curves of MSM device grown with AlGaN/GaN multi-quantum well (MQW) interlayer are observed and the pattern of oscillation is related to the sweep voltage. Oscillation phenomena is origin from polarization induced charge resonant tunneling through MQW
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; metal-semiconductor-metal structures; semiconductor quantum wells; ultraviolet detectors; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN MQW interlayer; AlGaN/GaN multiquantum well; MSM UV detector; MSM device; charge resonant tunneling; current discontinuity character; current-voltage curves; oscillation phenomena; Aluminum gallium nitride; Detectors; Electrons; Gallium nitride; MOCVD; Physics; Polarization; Quantum well devices; Resonant tunneling devices; Superlattices;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306572
