DocumentCode
3467136
Title
Current Discontinuity Character of MSM UV Detector Grown with AlGaN/GaN Multi-quantum Well
Author
Zhou, J. ; Hao, Y.L. ; Yang, Z.J. ; Zhang, G.Y.
Author_Institution
Inst. of Microelectron., Peking Univ., Beijing
fYear
2006
fDate
23-26 Oct. 2006
Firstpage
920
Lastpage
922
Abstract
The oscillation phenomena of current-voltage curves of MSM device grown with AlGaN/GaN multi-quantum well (MQW) interlayer are observed and the pattern of oscillation is related to the sweep voltage. Oscillation phenomena is origin from polarization induced charge resonant tunneling through MQW
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; metal-semiconductor-metal structures; semiconductor quantum wells; ultraviolet detectors; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN MQW interlayer; AlGaN/GaN multiquantum well; MSM UV detector; MSM device; charge resonant tunneling; current discontinuity character; current-voltage curves; oscillation phenomena; Aluminum gallium nitride; Detectors; Electrons; Gallium nitride; MOCVD; Physics; Polarization; Quantum well devices; Resonant tunneling devices; Superlattices;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0160-7
Electronic_ISBN
1-4244-0161-5
Type
conf
DOI
10.1109/ICSICT.2006.306572
Filename
4098277
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