Title :
Performance evaluation of all SiC power converters for realizing high power density of 50 W/cm3
Author :
Takao, K. ; Harada, S. ; Shinohe, T. ; Ohashi, H.
Author_Institution :
Corporative R&D Center, Toshiba Corp., Kawasaki, Japan
Abstract :
In high-power density power converter designs, power losses of power devices are essential design parameters because they determines the volume of cooling systems. The power loss of a SiC power module using a SiC Implantation and Epitaxial MOSFET (SiC-IEMOSFET) has been evaluated in the junction temperature range from 150°C to 250°C and the current density range from 100 A/cm2 to 250 A/cm2. By using the power loss data, design criteria of the junction temperature and current density of the SiC-IEMOSFET to realize the power density of 50W/cm3 have been extracted.
Keywords :
current density; power MOSFET; power convertors; silicon compounds; IEMOSFET; SiC; cooling systems; current density; epitaxial MOSFET; high-power density power converter designs; performance evaluation; power devices; power losses; temperature 150 degC to 250 degC; Current density; Data mining; Electronics industry; MOSFET circuits; Multichip modules; Power MOSFET; Power electronics; Silicon carbide; Temperature distribution; Voltage; Power density; Power loss; Silicon carbide;
Conference_Titel :
Power Electronics Conference (IPEC), 2010 International
Conference_Location :
Sapporo
Print_ISBN :
978-1-4244-5394-8
DOI :
10.1109/IPEC.2010.5543727
