Cost-effective MOSFET-transistors on bulk silicon in the deep sub-50 nm-region

The potential of bulk silicon with classical gate oxides and poly silicon gate electrodes has not come to its end yet. This paper discusses the possibility to produce conventional MOS-Transistors on bulk silicon in the deep sub-50 nm-region with extreme low demands to the used substrate and process equipment. A process that uses a modified local oxidation of silicon technique with low and high frequency induced plasma enhanced vapour deposited nitrides as oxygen diffusion mask is introduced. It can be combined with a deposition and etchback technique. The essential process parameters of the LF/HF-nitride deposition are discussed. After the simulation of the necessary dopant profiles the results are compared to the experimental data.