Title :
High breakdown voltage 4H-SiC Schottky Barrier Diodes with floating metal rings for MMIC applications
Author :
Zhou, Chun-Hua ; Luo, Xiao-Rong ; Deng, Xiao-Chuan ; Zhang, Jin-Ping ; Li, Zhao-Ji ; Zhang, Bo
Author_Institution :
Sch. of Microelectron. & Solid-State Electron., China Univ. of Electron. Sci. & Technol., Chengdu
Abstract :
A new high voltage 4H-SiC Schottky barrier diode (SBD) structure for monolithic microwave integrated circuit (MMIC) applications is proposed. It employs one or more floating metal rings (FMRs) which work similar to guard rings. Influence of FMRs structure on the breakdown voltage and cut-off frequencies of the SBD were studied by numerical device modeling. As compared to the one without ring, about 107% and 134% improvement in breakdown voltage while only about 17% and 25% decrease in cut-off frequencies have been achieved in SBDs with one and two rings
Keywords :
MMIC; Schottky diodes; semiconductor device breakdown; semiconductor device models; silicon compounds; wide band gap semiconductors; 4H-SiC Schottky barrier diodes; MMIC; SiC; floating metal rings; high breakdown voltage Schottky barrier diodes; monolithic microwave integrated circuit; semiconductor device models; Application specific integrated circuits; Cutoff frequency; MMICs; Magnetic resonance; Microwave devices; Microwave integrated circuits; Monolithic integrated circuits; Schottky barriers; Schottky diodes; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306602
