High breakdown voltage 4H-SiC Schottky Barrier Diodes with floating metal rings for MMIC applications

Author

Zhou, Chun-Hua ; Luo, Xiao-Rong ; Deng, Xiao-Chuan ; Zhang, Jin-Ping ; Li, Zhao-Ji ; Zhang, Bo

Author_Institution

Sch. of Microelectron. & Solid-State Electron., China Univ. of Electron. Sci. & Technol., Chengdu

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

944

Lastpage

946

Abstract

A new high voltage 4H-SiC Schottky barrier diode (SBD) structure for monolithic microwave integrated circuit (MMIC) applications is proposed. It employs one or more floating metal rings (FMRs) which work similar to guard rings. Influence of FMRs structure on the breakdown voltage and cut-off frequencies of the SBD were studied by numerical device modeling. As compared to the one without ring, about 107% and 134% improvement in breakdown voltage while only about 17% and 25% decrease in cut-off frequencies have been achieved in SBDs with one and two rings

Keywords

MMIC; Schottky diodes; semiconductor device breakdown; semiconductor device models; silicon compounds; wide band gap semiconductors; 4H-SiC Schottky barrier diodes; MMIC; SiC; floating metal rings; high breakdown voltage Schottky barrier diodes; monolithic microwave integrated circuit; semiconductor device models; Application specific integrated circuits; Cutoff frequency; MMICs; Magnetic resonance; Microwave devices; Microwave integrated circuits; Monolithic integrated circuits; Schottky barriers; Schottky diodes; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306602

Filename

4098285