Modelisation of current-voltage static characteristics of MOS structures

Charge transport in thick SiO₂-based dielectric layer was investigated by means of ramp voltage stressed current voltage I(V) simulation. To determine the electrical parameters of the oxide layer, we have based our study on a theoretical model developed by Chen and Wu [1]. In [1], a computer program using the fourth-order Runge-Kutta-Gill numerical method was set up to simulate the set of equations. In this work, we have combined Euler and Newton-Raphson numerical methods to simulate the model. The most important parameter, electric field breakdown, is extracted. Also, the thickness of oxide and the ramping rate are analyzed to demonstrate their effects on the current in the oxide and the breakdown voltage. The oxide electric resistivity is introduced [2] since it affects the current at low voltages. The simulation results are confirmed by experimental ones.