The Study of ZnO Photoconductive UV Detector

Author

Ying Li ; Feng, Shi-Wei ; Sun, Jing-Ying ; Xie, Xue-Song ; Yang, Ji ; Zhang, Yue-Zong ; Lu, Yi-Cheng

Author_Institution

Sch. of Electron. Inf. & Control Eng., Beijing Univ. of Technol.

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

947

Lastpage

949

Abstract

A ZnO photoconductive UV detector was fabricated on ZnO film grown by MOCVD based on Al/Au interdigital electrode. Nonalloyed Al/Au metallization scheme formed good ohmic contact on n-type ZnO. The dark and photoilluminated currents increased linearly with bias voltage. The cutoff wavelength of the detector was 368nm, and it was also in response to the blue and green light. Electrical and photoresponsive changes of the ZnO UV detector due to RF sputter deposition of antireflection coating (AR) were also studied

Keywords

II-VI semiconductors; MOCVD; aluminium; antireflection coatings; gold; metallisation; ohmic contacts; photoconducting devices; photoconductivity; photodetectors; sputter deposition; ultraviolet detectors; wide band gap semiconductors; zinc compounds; 368 nm; Al-Au; Al/Au interdigital electrode; MOCVD; RF sputter deposition; ZnO; ZnO film; ZnO photoconductive UV detector; antireflection coating; dark currents; n-type ZnO; nonalloyed Al/Au metallization scheme; ohmic contact; photoilluminated currents; Detectors; Electrodes; Gold; MOCVD; Metallization; Ohmic contacts; Photoconductivity; Radio frequency; Voltage; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306603

Filename

4098286