Title :
The Study of ZnO Photoconductive UV Detector
Author :
Ying Li ; Feng, Shi-Wei ; Sun, Jing-Ying ; Xie, Xue-Song ; Yang, Ji ; Zhang, Yue-Zong ; Lu, Yi-Cheng
Author_Institution :
Sch. of Electron. Inf. & Control Eng., Beijing Univ. of Technol.
Abstract :
A ZnO photoconductive UV detector was fabricated on ZnO film grown by MOCVD based on Al/Au interdigital electrode. Nonalloyed Al/Au metallization scheme formed good ohmic contact on n-type ZnO. The dark and photoilluminated currents increased linearly with bias voltage. The cutoff wavelength of the detector was 368nm, and it was also in response to the blue and green light. Electrical and photoresponsive changes of the ZnO UV detector due to RF sputter deposition of antireflection coating (AR) were also studied
Keywords :
II-VI semiconductors; MOCVD; aluminium; antireflection coatings; gold; metallisation; ohmic contacts; photoconducting devices; photoconductivity; photodetectors; sputter deposition; ultraviolet detectors; wide band gap semiconductors; zinc compounds; 368 nm; Al-Au; Al/Au interdigital electrode; MOCVD; RF sputter deposition; ZnO; ZnO film; ZnO photoconductive UV detector; antireflection coating; dark currents; n-type ZnO; nonalloyed Al/Au metallization scheme; ohmic contact; photoilluminated currents; Detectors; Electrodes; Gold; MOCVD; Metallization; Ohmic contacts; Photoconductivity; Radio frequency; Voltage; Zinc oxide;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306603
