Fabricacion and electrical properties of Al-doped ZnO/p-Si heterojunction

Author

Deng, Lei-Lei ; Li, Jing ; Wu, Sun-Tao ; Huang, Bo

fYear

2006

fDate

Oct. 2006

Firstpage

953

Lastpage

955

Abstract

Aluminum-doped zinc oxide (ZnO:Al) films were deposited by RF magnetron on p-Si(111) substrates to fabricate Al-doped/p-Si heterojunctions. The structural and electrical properties of the Al-doped ZnO films were characterized by X-ray diffraction spectroscopy (XRD), scanning electron microscopy (SEM) and Hall effect measurement, respectively. The results show that Al-doped ZnO thin films have high quality. The electrical junction properties were investigated by current-voltage (I-V) measurement, which reveals that the heterojunction shows typical rectifying behavior

Keywords

Hall effect; II-VI semiconductors; X-ray diffraction; aluminium; elemental semiconductors; scanning electron microscopy; semiconductor doping; semiconductor heterojunctions; semiconductor thin films; silicon; sputter deposition; wide band gap semiconductors; zinc compounds; Al-doped ZnO heterojunction; Al-doped ZnO thin films; Al-doped p-Si heterojunction; Hall effect measurement; RF magnetron; SEM; Si:Al; X-ray diffraction spectroscopy; XRD; ZnO:Al; aluminum-doped zinc oxide thin films; current-voltage measurement; electrical junction properties; electrical properties; scanning electron microscopy; structural properties; Electric variables measurement; Hall effect; Heterojunctions; Radio frequency; Scanning electron microscopy; Spectroscopy; Transistors; X-ray diffraction; X-ray scattering; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306605

Filename

4098288