Title :
Investigation of annealing on Au/p-CdZnTe Contact
Author :
Gong, Hua ; Sang, Wen-bin ; Min, Jia-hua ; Teng, Jian-yong ; Qian, Yong-biao
Author_Institution :
Sch. of Material Sci. & Eng., Shanghai Univ.
Abstract :
The effects of annealing for different periods at 373K in air on the properties of the contact between Au and p-CdZnTe have been investigated by current-voltage (I-V), shear-off-test and scanning acoustic microscopy (SAM) in this paper. It is found that annealing at 373K in air for 2h can get lower Schottky barrier height, better ohmic contact property and can enhance the adhesion force by 27%, but the continuity of the contact interface is deteriorated, compared with that before annealing. However, annealing at 373K in air for 4h will greatly increase the leakage current, the reason for which might be that the stoichiometric proportion of CdZnTe crystal has been changed
Keywords :
Schottky barriers; acoustic microscopy; adhesion; annealing; cadmium; gold; leakage currents; ohmic contacts; semiconductor-metal boundaries; zinc compounds; 2 h; 373 K; 4 h; Au; Au-CdZnTe contact; CdZnTe; Schottky barrier height; adhesion force; annealing; contact interface continuity; current-voltage measurement; leakage current; ohmic contact property; scanning acoustic microscopy; shear-off-test; stoichiometric proportion; Acoustic measurements; Acoustic testing; Adhesives; Annealing; Detectors; Gold; Leakage current; Microscopy; Ohmic contacts; Schottky barriers;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306607
