Investigation of annealing on Au/p-CdZnTe Contact

Author

Gong, Hua ; Sang, Wen-bin ; Min, Jia-hua ; Teng, Jian-yong ; Qian, Yong-biao

Author_Institution

Sch. of Material Sci. & Eng., Shanghai Univ.

fYear

2006

fDate

Oct. 2006

Firstpage

959

Lastpage

961

Abstract

The effects of annealing for different periods at 373K in air on the properties of the contact between Au and p-CdZnTe have been investigated by current-voltage (I-V), shear-off-test and scanning acoustic microscopy (SAM) in this paper. It is found that annealing at 373K in air for 2h can get lower Schottky barrier height, better ohmic contact property and can enhance the adhesion force by 27%, but the continuity of the contact interface is deteriorated, compared with that before annealing. However, annealing at 373K in air for 4h will greatly increase the leakage current, the reason for which might be that the stoichiometric proportion of CdZnTe crystal has been changed

Keywords

Schottky barriers; acoustic microscopy; adhesion; annealing; cadmium; gold; leakage currents; ohmic contacts; semiconductor-metal boundaries; zinc compounds; 2 h; 373 K; 4 h; Au; Au-CdZnTe contact; CdZnTe; Schottky barrier height; adhesion force; annealing; contact interface continuity; current-voltage measurement; leakage current; ohmic contact property; scanning acoustic microscopy; shear-off-test; stoichiometric proportion; Acoustic measurements; Acoustic testing; Adhesives; Annealing; Detectors; Gold; Leakage current; Microscopy; Ohmic contacts; Schottky barriers;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306607

Filename

4098290