Investigation of Passivation Layer of CdZnTe Detector

Author

Lu, Yue ; Sang, Wen-bin ; Xia, Jun ; Min, Jia-hua ; Qian, Yong-biao ; Teng, Jian-yong

Author_Institution

Sch. of Material Sci. & Eng., Shanghai Univ.

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

962

Lastpage

964

Abstract

The process of surface passivation of CdZnTe(CZT) plays dominant role in detector performance, which can decrease the noise of the detector and improve the spectral energy resolution. The thickness of the passivation film has been measured by infrared spectroscopic ellipsometry in this paper. The relationship between thickness of the passivation films and the passivation time was obtained. The results show that the thickness of three samples passivated for 5 min, 10 min, 15 min are 15.669 nm, 17.288 nm and 24.434 nm, respectively

Keywords

ellipsometry; infrared spectra; passivation; semiconductor counters; 10 mins; 15 mins; 15.669 nm; 17.288 nm; 24.434 nm; 5 mins; CdZnTe; CdZnTe detector; detector performance; infrared spectroscopic ellipsometry; passivation film thickness; passivation layer; passivation time; spectral energy resolution; surface passivation; Chemical processes; Detectors; Ellipsometry; Extraterrestrial measurements; Infrared spectra; Leakage current; Optical films; Passivation; Spectroscopy; Thickness measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306608

Filename

4098291