Thermally Activated Carrier Dynamics and Photoluminescence in Self-assembled InAs Quantum Dots

Author

Lee, Jiunn-Chyi ; Hu, Yeu-Jent ; Wu, Ya-Fen ; Fang, Jia-Hui ; Nee, Tzer-En ; Shen, Hui-Tang ; Wang, Jen-Cheng

Author_Institution

Dept. of Electr. Eng., Northern Taiwan Inst. of Sci. & Technol., Taipei

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

965

Lastpage

967

Abstract

Two InAs/GaAs quantum dot (QD) heterostructures with different InAs active layer thickness were carried out. It is found that thickening the InAs active layer will enhance the dot density. By analyzing the temperature dependence of the photoluminescence (PL) spectra of the samples, the carrier thermal emission and recapture among dots affect the PL spectra of high density QDs evidently. Besides, the transferring rate of carriers from wetting layer into QDs plays an influential role in the dependence of the PL spectra on temperature for the low density QDs sample

Keywords

III-V semiconductors; indium compounds; photoluminescence; quantum dots; self-assembly; thermoluminescence; InAs active layer; PL spectra; carrier recapture; carrier thermal emission; carrier transfer rate; photoluminescence; quantum dot density; quantum dot heterostructure; self-assembled InAs quantum dot; thermally activated carrier dynamics; wetting layer; Buffer layers; Epitaxial growth; Gallium arsenide; Laser excitation; Multilevel systems; Photoluminescence; Quantum dots; Temperature dependence; Temperature distribution; Thermal engineering;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306609

Filename

4098292