Title :
Thermally Activated Carrier Dynamics and Photoluminescence in Self-assembled InAs Quantum Dots
Author :
Lee, Jiunn-Chyi ; Hu, Yeu-Jent ; Wu, Ya-Fen ; Fang, Jia-Hui ; Nee, Tzer-En ; Shen, Hui-Tang ; Wang, Jen-Cheng
Author_Institution :
Dept. of Electr. Eng., Northern Taiwan Inst. of Sci. & Technol., Taipei
Abstract :
Two InAs/GaAs quantum dot (QD) heterostructures with different InAs active layer thickness were carried out. It is found that thickening the InAs active layer will enhance the dot density. By analyzing the temperature dependence of the photoluminescence (PL) spectra of the samples, the carrier thermal emission and recapture among dots affect the PL spectra of high density QDs evidently. Besides, the transferring rate of carriers from wetting layer into QDs plays an influential role in the dependence of the PL spectra on temperature for the low density QDs sample
Keywords :
III-V semiconductors; indium compounds; photoluminescence; quantum dots; self-assembly; thermoluminescence; InAs active layer; PL spectra; carrier recapture; carrier thermal emission; carrier transfer rate; photoluminescence; quantum dot density; quantum dot heterostructure; self-assembled InAs quantum dot; thermally activated carrier dynamics; wetting layer; Buffer layers; Epitaxial growth; Gallium arsenide; Laser excitation; Multilevel systems; Photoluminescence; Quantum dots; Temperature dependence; Temperature distribution; Thermal engineering;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306609
