DocumentCode
3467507
Title
The Preparation of Large diameter Twin-free InP Crystals
Author
Zhang, Weiyu ; Mao, Luhong ; Yang, Ruixia ; Kang, Xiaodong ; Zhou, Xiaolong ; Sun, Tongnian ; Sun, Niefeng
Author_Institution
Coll. of Precision Instrum. & Opto-Electron. Eng., Tianjin Univ.
fYear
2006
fDate
23-26 Oct. 2006
Firstpage
968
Lastpage
970
Abstract
InP substrates have been indispensable to both optical and electronic devices. The cost reduction in the manufacturing process of these devices and the increase in size of IC chips have strongly required a larger diameter of these substrate wafers. Promoted by this requirement, InP single crystal technology has been rapidly developed. In the present paper, the development and key technology of large diameter twin-free InP crystal growth are discussed
Keywords
III-V semiconductors; crystal growth from melt; indium compounds; substrates; twin boundaries; IC chip size; InP; InP single crystal technology; InP substrate; cost reduction; large diameter twin-free InP crystal growth; larger diameter substrate wafer; manufacturing process; Agricultural engineering; Circuit synthesis; Costs; Crystals; Indium phosphide; Optical devices; Optical microscopy; Substrates; Temperature distribution; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0160-7
Electronic_ISBN
1-4244-0161-5
Type
conf
DOI
10.1109/ICSICT.2006.306610
Filename
4098293
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