NDR Heterojunction Bipolar Transistor with Base of 8nm Width

Author

Guo, Wei-Lian ; Zhang, Shi-Lin ; Qi, Hai-Tao ; Liang, Hui-Lai ; Song, Rui-Liang ; Li, Jian-Heng ; Mao, Lu-Hong

Author_Institution

Sch. of Electron. Inf. Eng., Tianjin Univ.

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

971

Lastpage

973

Abstract

The high performance Negative differential resistance n-InGaP/P-GaAs/n-InGaP heterojunction bipolar transistor with base of 8nm width has been designed and fabricated successfully. The fabricated device exhibited voltage and current controlled two different negative resistance I-V characteristics for a same device and also exhibited a similar NDR characteristics related with transition from bipolar transistor to bulk barrier transistor. In this paper, above two special properties of NDRHBT have been investigated and analyzed

Keywords

III-V semiconductors; electric resistance; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; p-n heterojunctions; 8 nm; I-V characteristics; InGaP-GaAs-InGaP; NDR heterojunction bipolar transistor; NDRHBT; bulk barrier transistor; current-voltage measurement; device fabrication; negative differential resistance; ultra-thin base device; Bipolar transistors; Fabrication; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Lithography; Sputter etching; Sputtering; Voltage; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306611

Filename

4098294