Enhancement Mode pHEMT LNA with Super Low Noise and High Gain for S Band Application

Author

Huang, Hua ; Zhang, Hai-Ying ; Yin, Jun-Jian ; Ye, Tian-Chun

Author_Institution

Inst. of Microelectron., Chinese Acad. of Sci., Beijing

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

974

Lastpage

976

Abstract

A monolithic low noise amplifier has been developed for S band telecommunication system, using enhancement mode pHEMT technology with gate-length of 0.5mum. The LNA which approach the noise performance of discrete designs shows a 50Omega noise figure less than 1.0dB, gain greater than 28dB, return loss less than -10dB and more than 10dBm output power at 1dB compression point from 3.0 to 3.6 GHz. A good agreement between measured and simulated data had been achieved. These results are attributed to the low noise performance of the enhancement mode pHEMT and minimized parasitic resistance of the input match network

Keywords

amplification; high electron mobility transistors; low noise amplifiers; microwave amplifiers; 0.5 micron; 3.0 to 3.6 GHz; S band telecommunication system; compression point; enhancement mode pHEMT LNA; gain; gate length; input match network; monolithic low noise amplifier; noise figure; noise performance; output power; parasitic resistance minimization; return loss; Feedback; Impedance matching; Inductors; Low-noise amplifiers; Noise figure; PHEMTs; Performance gain; Power amplifiers; Power generation; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306612

Filename

4098295