Multifunctional Characteristics of Perovskite Oxide p-n Heterojunctions

Author

Lu, H.B. ; Jin, K.J. ; Zhao, K. ; Huang, Y.H. ; He, M. ; Chen, Z.H. ; Zhou, Y.L. ; Yang, G.Z.

Author_Institution

Beijing Nat. Lab. for Condensed Matter Phys., Chinese Acad. of Sci., Beijing

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

998

Lastpage

1001

Abstract

A series of all perovskite oxide p-n heterojunctions (PNHs) as well as perovskite oxide and Si PNHs have been fabricated by a laser molecular-beam epitaxy. The surfaces and interfaces of the PNHs are atomically smooth. The good nonlinear and rectifying I-V characteristics in the PNHs, unusual and high sensitivity of positive magnetoresistance in low magnetic field in SrNb_xTi_1-xO₃/La_1-ySr_yMnO₃ and La_1-xSr_yMnO₃/Si PNHs, picosecond orders ultrafast photoelectric effect in La_1-xSr_yMnO₃ PNHs, as well as ferroelectric property due to the interface enhancement in BaNb_0.3Ti_0.7O₃/Si PNHs have been observed. It is expected that the further investigation on the PNHs could not only stimulate theoretical study on the mechanisms but also would open up new possibilities in the development and application of electrical devices

Keywords

lanthanum compounds; magnetoresistance; molecular beam epitaxial growth; p-n heterojunctions; silicon; strontium compounds; BaNb_0.3Ti_0.7O₃; IV characteristics; La_1-xSr_yMnO₃; La_1-ySr_yMnO₃; LaSrMnO₃; SrNb_xTi_1-xO₃; SrNbTiO₃; ferroelectric property; interface enhancement; laser molecular beam epitaxy; multifunctional characteristics; perovskite oxide p-n heterojunctions; photoelectric effect; positive magnetoresistance; Decision support systems; Fabrication; Heterojunctions;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306641

Filename

4098302