Interfacial depletion layers evidenced from dielectric relaxation current in ferroelectric thin films

Author

Jiang, A.Q. ; Lin, Y.Y. ; Tang, T.A.

Author_Institution

Dept. of Microelectron., Fudan Univ., Shanghai

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

1007

Lastpage

1009

Abstract

The relaxation current decays with time t to follow the Curie-von Schweidler law of J_r(t) = J₀fⁿ with the exponent n slightly less than the unity either under or after dc-voltage stressing of Pb(Zr,Ti)O₃ thin films, in agreement with direct measurements of capacitance dispersion evaluated from frequency spectrum. J₀ versus voltage shows a typical behavior of p-n junction at t = 0.28 s but overlapping of twin p-n junctions at t < 10 ms. This predicts voltage modification of two interfacial depletion layers formed by polarization terminations near interfaces between the film and electrodes

Keywords

dielectric relaxation; ferroelectric thin films; lead compounds; titanium compounds; zirconium compounds; 0.28 s; Curie-von Schweidler law; Pb(Zr,Ti)O₃ thin films; Pb(ZrTi)O₃; capacitance dispersion; dc-voltage stressing; dielectric relaxation current; ferroelectric thin films; frequency spectrum; interfacial depletion layers; p-n junction; polarization terminations; Capacitance measurement; Current measurement; Dielectric thin films; Ferroelectric materials; Frequency measurement; P-n junctions; Stress measurement; Time measurement; Transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306644

Filename

4098305