Investigation of Ni reaction with amorphous SiGeC thin film

The reaction between Ni and amorphous SiGeC thin film on SiO₂ substrate is investigated. Four point probe (FPP), X-ray diffraction (XRD) and Auger electron spectroscopy (AES) depth profiling are used to check the sheet resistance, the phase formation and atomic distribution during the reaction. It is found that comparing with Ni reaction with a-SiGe, the phase change of Ni reaction with a-SiGeC is different. After 700 degC annealing a tetragonal phase of eta-NiSi is formed during the Ni reaction with a-SiGeC. Ge atoms diffuse to the surface at a higher temperature and cause the lattice constant decrease of the formed Ni(SiGe) film