Title :
Investigation of irradiation donors in electron irradiated CZ-Si
Author :
Cai, Lili ; Li, Yangxian ; Chen, Guifeng ; Li, Xinghua ; Hao, Jiangang ; Zhang, Yu
Author_Institution :
Sch. of Material Sci. & Eng., Hebei Univ. of Technol., Tianjin
Abstract :
Behavior of the irradiation donor (ID) after annealing in electron irradiated CZ-Si has been studied by using various kinds of experimental means and the effect of electron doses and oxygen concentration on the formation of ID is discussed. The changes in the resistivity and donor concentration induced by the electron irradiation have been studied using the four point probe measurements at room temperature. Its electric activity originates from the interface state of Si/SiO2 precipitate and its structure is metastable complex which consists of irradiation defects, silicon, silicon dioxide and carbon
Keywords :
annealing; probes; radiation effects; silicon; silicon compounds; Si-SiO2; Si/SiO2 precipitate; annealing; donor concentration; electric activity; electron doses; electron irradiated CZ-Si; electron irradiation; four point probe measurements; interface state; irradiation defects; irradiation donors; oxygen concentration; Annealing; Carbon dioxide; Conductivity; Electrons; Interface states; Materials science and technology; Metastasis; Probes; Silicon compounds; Temperature measurement;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306648
