SDRAM space radiation effects measurements and analysis

Author

Henson, B.G. ; McDonald, P.T. ; Stapor, W.J.

Author_Institution

Innovative Concepts Inc., McLean, VA, USA

fYear

1999

fDate

1999

Firstpage

15

Lastpage

23

Abstract

In recent years, memory technology has been advancing quickly. This paper presents the comprehensive radiation effects examination of two high density (64 Mb and 128 Mb) 0.35 μm CMOS Synchronous Dynamic Random Access Memories (SDRAMs). This study uses the major components of the natural near earth environment to determine the applicability of these parts to space missions. Protons have been used to measure the single event effect (SEE) and total dose sensitivity of these devices. Heavy ions were used to measure the SEE, including single event latch-up (SEL), sensitivity of these devices. Comparisons are made between results from semi-empirical modeling and results from data

Keywords

CMOS memory circuits; DRAM chips; integrated circuit modelling; ion beam effects; proton effects; radiation hardening (electronics); space vehicle electronics; 0.35 mum; 128 Mbit; 64 Mbit; SDRAM space radiation effects; heavy ions; high density CMOS Synchronous Dynamic Random Access Memories; memory technology; near earth environment; protons; radiation effects; semi-empirical modeling; sensitivity; single event effect; single event latch-up; space missions; total dose sensitivity; Artificial intelligence; Degradation; Energy loss; Energy measurement; Extraterrestrial measurements; Loss measurement; Packaging; Radiation effects; SDRAM; X-rays;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation Effects Data Workshop, 1999

Conference_Location

Norfolk, VA

Print_ISBN

0-7803-5660-8

Type

conf

DOI

10.1109/REDW.1999.816049

Filename

816049