Towards Quantum Ballistic Field-Effect Transistors: Design and Experimental Results

Summary form only given. In this talk, we show that properly designed 1D-QB conductor can actually lead to voltage-gain. Conceptually, the electric conduction in the 1D-QB conductor can be described by the Landauer-Buttiker formalism in terms of the relative positions between the 1D sub-bands (SB), the electrochemical potential of the source reservoir and that of the drain reservoir, and the transmission coefficient. As the position of 1D-SB versus the electrochemical potential of the source reservoir can be modulated by split-gates, a step-like variation of the drain-source current can thus be realized, leading to a high transconductance. Besides, the non-linearity in the QB regime takes place when the number of occupied 1D-SB by the source reservoir and by the drain reservoir is unequal, which results in a low output conductance. A high voltage-gain can hence be accomplished