Mapping evaluation of inhomogeneously degraded Au/Pt/Ti contacts to GaAs

Author

Shiojima, Kenji ; Okumura, Tsugunori

Author_Institution

Dept. of Electr. Eng., Tokyo Metropolitan Univ., Japan

fYear

1991

fDate

9-11 April 1991

Firstpage

234

Lastpage

238

Abstract

A photoelectric technique was developed and used to map the inhomogeneities of thermally aged Au/Pt/Ti Schottky contacts to GaAs. The measurements were made as a function of position. The authors report the results of electrical measurements on the diodes, and the correlation between these measurements and the optical measurements. A model for the degradation of Au/Pt/Ti Schottky barriers on GaAs is discussed. A good correlation was found between the percentage of a contact that had low barrier height and the forward bias leakage current. Localized degradation is attributed to interdiffusion of gold to form a gold-gallium phase.<>

Keywords

III-V semiconductors; Schottky effect; Schottky-barrier diodes; ageing; electrical contacts; gallium arsenide; gold; leakage currents; photoemission; platinum; semiconductor-metal boundaries; titanium; Au-Ga phase; Au-Pt-Ti-GaAs; Schottky contacts; degradation; diodes; electrical measurements; forward bias leakage current; interdiffusion; mapping evaluation; model; optical measurements; photoelectric technique; Aging; Contacts; Electric variables measurement; Gallium arsenide; Gold; Leakage current; Position measurement; Schottky barriers; Schottky diodes; Thermal degradation;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1991, 29th Annual Proceedings., International

Conference_Location

Las Vegas, NV, USA

Print_ISBN

0-87942-680-2

Type

conf

DOI

10.1109/RELPHY.1991.146019

Filename

146019