DocumentCode
3468046
Title
Total ionizing dose effects in a SRAM-based FPGA
Author
MacQueen, D.M. ; Gingrich, D.M. ; Buchanan, N.J. ; Green, P.W.
Author_Institution
Dept. of Phys., Alberta Univ., Edmonton, Alta., Canada
fYear
1999
fDate
1999
Firstpage
24
Lastpage
29
Abstract
We have measured the effects of total ionizing dose on Xilinx XC4036X FPGAs. The FPGAs were irradiated at a dose rate of about, 0.5 krad/hr. An average total dose of 39 krad(Si) and 16 krad(Si) were absorbed by the XL-series and XLA-series FPGAs, respectively, before the power supply current increased
Keywords
SRAM chips; field programmable gate arrays; radiation hardening (electronics); 16 krad; 39 krad; SRAM-based FPGA; XL-series; XLA-series; Xilinx XC4036X FPGAs; dose rate; field programmable gate arrays; power supply current; total dose; total ionizing dose effects; Aluminum; Apertures; Circuit testing; Computer errors; Computerized monitoring; Dosimetry; Field programmable gate arrays; Lead; Ovens; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop, 1999
Conference_Location
Norfolk, VA
Print_ISBN
0-7803-5660-8
Type
conf
DOI
10.1109/REDW.1999.816052
Filename
816052
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