• DocumentCode
    3468083
  • Title

    Single-event upset test results for the Xilinx XQ1701L PROM

  • Author

    Guertin, Steven M. ; Swift, G.M. ; Nguyen, D.

  • Author_Institution
    Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    35
  • Lastpage
    40
  • Abstract
    A 3.3 V serial PROM, used to configure advanced Xilinx FPGAs, was tested for single event effects with heavy ions. Device latchup was observed with an LET threshold of 55 MeV per mg/cm2 and a saturated cross-section of 10-5 cm2. Three types of upsets were measured: (1) address errors, (2) premature end-of-program signals, and (3) functional interrupt
  • Keywords
    PROM; field programmable gate arrays; integrated circuit testing; ion beam effects; radiation hardening (electronics); 3.3 V; LET threshold; Xilinx XQ1701L PROM; address errors; advanced Xilinx FPGAs; device latchup; functional interrupt; heavy ions; premature end-of-program signals; saturated cross-section; serial PROM; single event effects; single-event upset test; Field programmable gate arrays; Laboratories; PROM; Pins; Programming profession; Propulsion; Random access memory; Space technology; Substrates; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop, 1999
  • Conference_Location
    Norfolk, VA
  • Print_ISBN
    0-7803-5660-8
  • Type

    conf

  • DOI
    10.1109/REDW.1999.816054
  • Filename
    816054
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3468083