• DocumentCode
    3468093
  • Title

    Single-electron device using Si nanodot array and multi-input gates

  • Author

    Kaizawa, Takuya ; Arita, Masashi ; Fujiwara, Akira ; Yamazaki, Kenji ; Ono, Yukinori ; Inokawa, Hiroshi ; Takahashi, Yasuo

  • Author_Institution
    Graduate Sch. of Inf. Sci. & Technol., Hokkaido Univ., Sapporo
  • fYear
    2006
  • fDate
    23-26 Oct. 2006
  • Firstpage
    1062
  • Lastpage
    1064
  • Abstract
    We fabricated a single-electron device (SED) that has many nanodots. Oscillatory characteristics and multi-gate capabilities of SEDs were used to eliminate size fluctuation and achieve a high functionality. We fabricated a Si nanodot array device, which has two input gates and a control gate, and tested its basic operation characteristics experimentally. The device operates as a logic gate with selectable functions when the control gate voltage is changed. We demonstrated that the device exhibits five of six important logic functions
  • Keywords
    logic gates; nanoelectronics; silicon; single electron devices; Si; Si nanodot array device; logic gate; multiinput gates; oscillatory characteristics; single-electron device; Capacitance; Circuit simulation; Circuit testing; Equivalent circuits; Fluctuations; Information science; Logic functions; Nanoscale devices; Single electron devices; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    1-4244-0160-7
  • Electronic_ISBN
    1-4244-0161-5
  • Type

    conf

  • DOI
    10.1109/ICSICT.2006.306681
  • Filename
    4098322